Publication

Sharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfer

Giorgio Margaritondo
2000
Journal Articles

Abstract

An Sb/Si(lll)root 3x root3 surface has been studied by high-resolution core-level spectroscopy. All the components of the Si 2p core level related to the clean surface have disappeared, and one strong Sb-induced component could be identified at a binding energy +0.13 eV with respect to the bulk peak. Such a component is mainly due to charge transfer between Si atoms at the top layer and Sb trimers. Two more small components are observed: one at +0.29 eV, due to Sb atoms residing at a different position, and one at -0.14 eV, due to local disorder. On the Si 2p core level taken in bulk sensitive mode, we found a very narrow bulk component with a total full width at half maximum of 130 meV at T=100 K.

Official source

https://infoscience.epfl.ch/entities/publication/f8f1fe9e-1a8d-4930-8822-a711662e75b6

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Giorgio Margaritondo
2000
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/f8f1fe9e-1a8d-4930-8822-a711662e75b6

About this result

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X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique based on the photoelectric effect that can identify the elements that exist within a material (elemental composition) or are covering its surface, as well as their chemical state, and the overall electronic structure and density of the electronic states in the material. XPS is a powerful measurement technique because it not only shows what elements are present, but also what other elements they are bonded to.

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Sharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfer

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