Rough setIn computer science, a rough set, first described by Polish computer scientist Zdzisław I. Pawlak, is a formal approximation of a crisp set (i.e., conventional set) in terms of a pair of sets which give the lower and the upper approximation of the original set. In the standard version of rough set theory (Pawlak 1991), the lower- and upper-approximation sets are crisp sets, but in other variations, the approximating sets may be fuzzy sets. The following section contains an overview of the basic framework of rough set theory, as originally proposed by Zdzisław I.
Power semiconductor deviceA power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers.
CapacitorA capacitor is a device that stores electrical energy in an electric field by accumulating electric charges on two closely spaced surfaces that are insulated from each other. It is a passive electronic component with two terminals. The effect of a capacitor is known as capacitance. While some capacitance exists between any two electrical conductors in proximity in a circuit, a capacitor is a component designed to add capacitance to a circuit.
Ring strainIn organic chemistry, ring strain is a type of instability that exists when bonds in a molecule form angles that are abnormal. Strain is most commonly discussed for small rings such as cyclopropanes and cyclobutanes, whose internal angles are substantially smaller than the idealized value of approximately 109°. Because of their high strain, the heat of combustion for these small rings is elevated. Ring strain results from a combination of angle strain, conformational strain or Pitzer strain (torsional eclipsing interactions), and transannular strain, also known as van der Waals strain or Prelog strain.
Circular polarizationIn electrodynamics, circular polarization of an electromagnetic wave is a polarization state in which, at each point, the electromagnetic field of the wave has a constant magnitude and is rotating at a constant rate in a plane perpendicular to the direction of the wave. In electrodynamics, the strength and direction of an electric field is defined by its electric field vector. In the case of a circularly polarized wave, the tip of the electric field vector, at a given point in space, relates to the phase of the light as it travels through time and space.
Strain (chemistry)In chemistry, a molecule experiences strain when its chemical structure undergoes some stress which raises its internal energy in comparison to a strain-free reference compound. The internal energy of a molecule consists of all the energy stored within it. A strained molecule has an additional amount of internal energy which an unstrained molecule does not. This extra internal energy, or strain energy, can be likened to a compressed spring.
High-κ dielectricIn the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Infinitesimal strain theoryIn continuum mechanics, the infinitesimal strain theory is a mathematical approach to the description of the deformation of a solid body in which the displacements of the material particles are assumed to be much smaller (indeed, infinitesimally smaller) than any relevant dimension of the body; so that its geometry and the constitutive properties of the material (such as density and stiffness) at each point of space can be assumed to be unchanged by the deformation.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Set-builder notationIn set theory and its applications to logic, mathematics, and computer science, set-builder notation is a mathematical notation for describing a set by enumerating its elements, or stating the properties that its members must satisfy. Defining sets by properties is also known as set comprehension, set abstraction or as defining a set's intension. Set (mathematics)#Roster notation A set can be described directly by enumerating all of its elements between curly brackets, as in the following two examples: is the set containing the four numbers 3, 7, 15, and 31, and nothing else.
RF power amplifierA radio-frequency power amplifier (RF power amplifier) is a type of electronic amplifier that converts a low-power radio-frequency signal into a higher-power signal. Typically, RF power amplifiers are used in the final stage of a radio transmitter, their output driving the antenna. Design goals often include gain, power output, bandwidth, power efficiency, linearity (low signal compression at rated output), input and output impedance matching, and heat dissipation.
