Publication

Strain-induced interface instability in GaN/AlN multiple quantum wells

Nicolas Grandjean, Jean-François Carlin
2007
Journal Articles

Abstract

It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either AlN or GaN templates. The GaN/AlN interface is found to be unstable when pseudomorphically strained onto GaN, in agreement with theory. This effect deeply affects the quantum well potential profile leading to a strong redshift of the ISBT energies.

Official source

https://infoscience.epfl.ch/entities/publication/f78ac599-776f-4ec6-9a79-3a23d389f801

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Strain-induced interface instability in GaN/AlN multiple quantum wells

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