Publication

Double-gate pentacene thin-film transistor with improved control in sub-threshold region

Mihai Adrian Ionescu
2010
Journal Articles

Abstract

In this work double-gate pentacene TFT architecture is proposed and experimentally investigated. The devices are fabricated on a polyimide substrate based on a process that combines three levels of stencil lithography with standard photolithography. Similarly to the operation of a conventional double-gate silicon FET, the top-gate bias modulates the threshold voltage of the bottom-gate transistor and significantly improves the transistor sub-threshold swing and leakage current. Moreover, the double gate TFT shows good promise for the enhancement of I-ON/I-OFF, especially by the control of I-OFF in devices with poor top interfaces. (C) 2010 Elsevier Ltd. All rights reserved.

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https://infoscience.epfl.ch/entities/publication/f75642d4-a3a7-42e1-8d6a-aea26843bf3a

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Mihai Adrian Ionescu
2010
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/f75642d4-a3a7-42e1-8d6a-aea26843bf3a

About this result

Related concepts (32)

Subthreshold conduction

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

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Double-gate pentacene thin-film transistor with improved control in sub-threshold region

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