From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

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Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

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In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

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From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

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