Publication

Resistive Switching Element and Use Thereof

Davide Sacchetto
2016
Patents

Abstract

A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer, at least one oxygen gettering layer NOy, wherein the resistive switching device further includes an electrically conductive top electrode.

Official source

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Resistive Switching Element and Use Thereof

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