Publication

Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures

Jean-Daniel Ganière
1998
Journal Articles

Abstract

Lattice-matched Zn1-yCdySe/InxGa1-xAs heterojunctions can be fabricated by molecular beam epitaxy on GaAs(001) 2x4 surfaces in a wide range of compositions provided that a suitable strain relaxation profile is achieved within the ternary m-V buffer layer. We focus here on the structural properties of the resulting II-VI/III-V heterostructures and discuss the distribution of native defects, including misfit and threading dislocations, stacking faults, and surface corrugations, (C) 1998 American Vacuum Society.

Official source

https://infoscience.epfl.ch/entities/publication/f53732c2-3ef5-419f-856c-2286dd49567e

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Jean-Daniel Ganière
1998
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/f53732c2-3ef5-419f-856c-2286dd49567e

About this result

Related concepts (5)

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Epitaxy

Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.