Publication

Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices

2016
Posters

Abstract

We build sub-20 nm gaps in hydrogen silsesquioxane (HSQ) by electron beam lithography, to enable nano-template structures for selective epitaxial growth of Ge or III-V semiconductors for ultra-scaled electronic applications [1]. Gaps of this order have been achieved using more complex methods such as processes based on shallow trench isolation (STI) structures [2].

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2016
Posters

Abstract

Official source

Related concepts (27)

Nanoelectronics

Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics.

Electron-beam lithography

Electron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.

Photolithography

In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.

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Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices

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