Publication

Band Bending at Semiconductor Interfaces and Its Effect on Photoemission Line-Shapes

Giorgio Margaritondo
1993
Journal Articles

Abstract

We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of the band bending, and in most cases negligible. Non-negligible increases are found only when the linewidth is smaller than and, simultaneously, the photoelectron escape depth larger than in a typical experiment.

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Giorgio Margaritondo
1993
Journal Articles

Abstract

Official source

Related concepts (21)

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique based on the photoelectric effect that can identify the elements that exist within a material (elemental composition) or are covering its surface, as well as their chemical state, and the overall electronic structure and density of the electronic states in the material. XPS is a powerful measurement technique because it not only shows what elements are present, but also what other elements they are bonded to.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

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Band Bending at Semiconductor Interfaces and Its Effect on Photoemission Line-Shapes

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