Improving the Fault Tolerance of Nanometric PLA Designs

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The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

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Improving the Fault Tolerance of Nanometric PLA Designs

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Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

SAT-based Exact Modulo Scheduling Mapping for Resource-Constrained CGRAs

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

Customizing the human-avatar mapping based on EEG error related potentials during avatar-based interaction

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Semiconductor-based device architectures in multimaterial fibers

Technology Mapping Using Multi-output Library Cells

Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Single Chip Dynamic Nuclear Polarization Microsystems

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography