Publication

Three-Independent-Gate Reconfigurable Transistors in 22 nm FDSOI for in-Sensor Time-Domain Mixed-Signal Processing

2026

Abstract

Massively integrated embedded systems capable of sensing, computing, and communicating information are increasingly ubiquitous in modern technology. The high density of devices imposes stringent constraints on energy consumption and cost, particularly for implantable medical devices for point-of-care or drug monitoring. Time-domain mixed-signal processing offers a promising solution by combining the multi-bit information transport of analog computing with the robustness and scalability of digital circuits. Here, we propose Three-Independent-Gate Reconfigurable FETs as an efficient device primitive for time-domain information processing. These devices exhibit intrinsic current-limiting and XNOR functionalities, which can be leveraged to implement a compact voltage-controlled pulse-width modulator, the fundamental building block of this approach. The concept is validated through measurements on fabricated devices based on the 22nm process of GlobalFoundries.

Official source

https://infoscience.epfl.ch/entities/publication/eb2ed07f-87f5-4da8-8c8c-5958eff30258

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2026

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/eb2ed07f-87f5-4da8-8c8c-5958eff30258

About this result

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