Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

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The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

This paper discusses different measurement methods to evaluate the efficiency of WBG-based power supply solutions, including electrical measurement methods and their verification with calorimetric methods, and compares the performance of Si-based and GaN-b ...

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

The present invention relates to a method for operating a resonant power converter (1) having a primary stage (2) and a secondary stage (3) at least one of which is actively operated and includes a half-bridge or full-bridge inverter (21) having a pull-up ...

Early works(1) and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits(2,3), modulators with improved half-wave voltage(4,5), electro-optic frequency combs(6) and on-chip electro-optic devic ...

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

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Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Measurement of WBG-based power supplies

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

Method for operating a power converter and power converter

Ultrafast tunable lasers using lithium niobate integrated photonics