Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
TransistorA transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Metal gateA metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. They used silicon as channel material and a non-self-aligned aluminum gate.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
Negative-index metamaterialNegative-index metamaterial or negative-index material (NIM) is a metamaterial whose refractive index for an electromagnetic wave has a negative value over some frequency range. NIMs are constructed of periodic basic parts called unit cells, which are usually significantly smaller than the wavelength of the externally applied electromagnetic radiation. The unit cells of the first experimentally investigated NIMs were constructed from circuit board material, or in other words, wires and dielectrics.
ISFETAn ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H+, see pH scale) changes, the current through the transistor will change accordingly. Here, the solution is used as the gate electrode. A voltage between substrate and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode.
Band gapIn solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.
Self-aligned gateIn semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain. The use of self-aligned gates in MOS transistors is one of the key innovations that led to the large increase in computing power in the 1970s.
MESFETA MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate. MESFETs are constructed in compound semiconductor technologies lacking high quality surface passivation, such as gallium arsenide, indium phosphide, or silicon carbide, and are faster but more expensive than silicon-based JFETs or MOSFETs.
PermittivityIn electromagnetism, the absolute permittivity, often simply called permittivity and denoted by the Greek letter ε (epsilon), is a measure of the electric polarizability of a dielectric. A material with high permittivity polarizes more in response to an applied electric field than a material with low permittivity, thereby storing more energy in the material. In electrostatics, the permittivity plays an important role in determining the capacitance of a capacitor.
Photonic metamaterialA photonic metamaterial (PM), also known as an optical metamaterial, is a type of electromagnetic metamaterial, that interacts with light, covering terahertz (THz), infrared (IR) or visible wavelengths. The materials employ a periodic, cellular structure. The subwavelength periodicity distinguishes photonic metamaterials from photonic band gap or photonic crystal structures. The cells are on a scale that is magnitudes larger than the atom, yet much smaller than the radiated wavelength, are on the order of nanometers.
Ultra high frequencyUltra high frequency (UHF) is the ITU designation for radio frequencies in the range between 300 megahertz (MHz) and 3 gigahertz (GHz), also known as the decimetre band as the wavelengths range from one meter to one tenth of a meter (one decimeter). Radio waves with frequencies above the UHF band fall into the super-high frequency (SHF) or microwave frequency range. Lower frequency signals fall into the VHF (very high frequency) or lower bands.
Tunable metamaterialA tunable metamaterial is a metamaterial with a variable response to an incident electromagnetic wave. This includes remotely controlling how an incident electromagnetic wave (EM wave) interacts with a metamaterial. This translates into the capability to determine whether the EM wave is transmitted, reflected, or absorbed. In general, the lattice structure of the tunable metamaterial is adjustable in real time, making it possible to reconfigure a metamaterial device during operation.
High-κ dielectricIn the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
Nonlinear metamaterialA nonlinear metamaterial is an artificially constructed material that can exhibit properties not yet found in nature. Its response to electromagnetic radiation can be characterized by its permittivity and material permeability. The product of the permittivity and permeability results in the refractive index. Unlike natural materials, nonlinear metamaterials can produce a negative refractive index. These can also produce a more pronounced nonlinear response than naturally occurring materials.
Technological changeTechnological change (TC) or technological development is the overall process of invention, innovation and diffusion of technology or processes.From [[The New Palgrave Dictionary of technical change" by S. Metcalfe. • "biased and biased technological change" by Peter L. Rousseau. • "skill-biased technical change" by Giovanni L. Violante.
Metamaterial absorberA metamaterial absorber is a type of metamaterial intended to efficiently absorb electromagnetic radiation such as light. Furthermore, metamaterials are an advance in materials science. Hence, those metamaterials that are designed to be absorbers offer benefits over conventional absorbers such as further miniaturization, wider adaptability, and increased effectiveness. Intended applications for the metamaterial absorber include emitters, photodetectors, sensors, spatial light modulators, infrared camouflage, wireless communication, and use in solar photovoltaics and thermophotovoltaics.
Electronic band structureIn solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.
DielectricIn electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation.
