Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

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RF MEMS piezoelectric acoustic resonators are the essential building blocks for RF filters used in RF front-end modules for wireless mobile communication due to their compact size in the MHz-GHz frequency range, high Quality factors and large relative band ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Microelectromechanical systems (MEMS) is among the most revolutionary technologies of 21st century, with the applications ranging from industrial systems to consumer electronics. Using MEMS in battery-powered wireless devices has long been seen as the evol ...

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

Atomically thin two-dimensional (2D) materials have attracted great interest due to their unique optoelectronic properties which are very different from their bulk counterparts. Most of the proof-of-concept devices, however, have been demonstrated using th ...

Self-consistent GW calculations with efficient vertex corrections are employed to determine the electronic structure of liquid water. Nuclear quantum effects are taken into account through ab initio path-integral molecular dynamics simulations. We reveal a ...

We study the formation energies of native point defects in GaN through density-functional theory. In our first-principles scheme, the band edges are positioned in accord with hybrid density functional calculations, thus yielding a band-gap in agreement wit ...

Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

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Development of Thin Film Lithium Niobate Shear Bulk Acoustic Wave Resonators

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Ultra low quantum decoherence nano-optomechanical systems

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Development of Lamb wave resonators in thin film X-cut lithium niobate

Nanopillars Enabling III-V Integration on Si (100) and (111)

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Atomically Thin Two-dimensional Materials Grown by Molecular Beam Epitaxy

Ab initio Electronic Structure of Liquid Water

Energetics of native point defects in GaN: A density-functional study