Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

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This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

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Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

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TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

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