Publication

High-Resolution Synchrotron-Radiation Core-Level Spectroscopy of Decapped GaAs(100) Surfaces

Giorgio Margaritondo
1991
Journal Articles

Abstract

We report a high-resolution core-level spectroscopy study of the (4 x 2)-c(8 x 2) GaAs(100) surface prepared by thermal decapping of surfaces grown by molecular-beam epitaxy. Ga and As 3d core levels are analyzed using very strict parameter conditions, and compared with core levels taken from cleaved GaAs(110). Two surface components are resolved in the Ga spectra while only one surface component is necessary for As. We tentatively assign the two Ga surface components to inequivalent Ga dimers in the unit cell; the As surface component is assigned to the threefold-coordinated second-layer As next to the missing row of Ga dimers. The position of the Fermi level on decapped n-type and p-type substrates is investigated in detail. The characterization of these clean decapped (100) surfaces provides a firm basis for further studies of electrical and chemical properties of metal-semiconductor interfaces.

Official source

https://infoscience.epfl.ch/entities/publication/e6c81681-98e1-4a0e-9cfe-595165b62b81

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Giorgio Margaritondo
1991
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/e6c81681-98e1-4a0e-9cfe-595165b62b81

About this result

Related concepts (32)

X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique based on the photoelectric effect that can identify the elements that exist within a material (elemental composition) or are covering its surface, as well as their chemical state, and the overall electronic structure and density of the electronic states in the material. XPS is a powerful measurement technique because it not only shows what elements are present, but also what other elements they are bonded to.

Photoemission spectroscopy

Photoemission spectroscopy (PES), also known as photoelectron spectroscopy, refers to energy measurement of electrons emitted from solids, gases or liquids by the photoelectric effect, in order to determine the binding energies of electrons in the substance. The term refers to various techniques, depending on whether the ionization energy is provided by X-ray, XUV or UV photons. Regardless of the incident photon beam, however, all photoelectron spectroscopy revolves around the general theme of surface analysis by measuring the ejected electrons.

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A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

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High-Resolution Synchrotron-Radiation Core-Level Spectroscopy of Decapped GaAs(100) Surfaces

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