Publication

Schottky barrier at the Au/Gap(110) interface

Giorgio Margaritondo
1996
Journal Articles

Abstract

The Schottky-barrier formation of the Au/GaP (110) interface has been investigated by photoemission, in the presence of large surface photovoltage effects induced by the intense photon beam of a synchrotron-radiation source. The surface photovoltage has been measured with a Kelvin probe. The largest surface photovoltage shift observed in the photoemission spectra was almost 1 eV. The Schottky barrier appears to be fully established at about 8 Angstrom, while the surface photovoltage does not disappear until about 16 Angstrom. The Schottky-barrier height is 1.35+/-0.1 eV. The Kelvin-probe results demonstrate directly that the photoemission data must be corrected for the surface photovoltage during the formation of the barrier but are insensitive to it once full coverage is obtained. (C) 1996 American Vacuum Society.

Official source

https://infoscience.epfl.ch/entities/publication/e6802f83-ca2c-4bfd-8c03-40e25358417c

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Giorgio Margaritondo
1996
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/e6802f83-ca2c-4bfd-8c03-40e25358417c

About this result

Related concepts (31)

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

Ohmic contact

An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds. By contrast, a junction or contact that does not demonstrate a linear I–V curve is called non-ohmic.

Field electron emission

Field electron emission, also known as field emission (FE) and electron field emission, is emission of electrons induced by an electrostatic field. The most common context is field emission from a solid surface into a vacuum. However, field emission can take place from solid or liquid surfaces, into a vacuum, a fluid (e.g. air), or any non-conducting or weakly conducting dielectric. The field-induced promotion of electrons from the valence to conduction band of semiconductors (the Zener effect) can also be regarded as a form of field emission.

Related publications (8)

Schottky barrier at the Au/Gap(110) interface

Chat with Graph Search

Norland optical adhesive (NOA81) microchannels with adjustable wetting behavior and high chemical resistance against a range of mid-infrared-transparent organic solvents

Synchrotron radiation in radiology: novel X-ray sources

Mobile small polarons and the Peierls transition in the quasi-one-dimensional conductor K0.3MoO3