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Theoretical explanation of passivation behavior in OFP-Cu and OF-Cu

Related publications (32)

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

EPFL2023

Fluoride-Rich, Organic-Inorganic Gradient Interphase Enabled by Sacrificial Solvation Shells for Reversible Zinc Metal Batteries

Jun Lu, Lei Zhang, Kangning Zhao, Xu Zhang

Zinc metal batteries are strongly hindered by water corrosion, as solvated zinc ions would bring the active water molecules to the electrode/electrolyte interface constantly. Herein, we report a sacrificial solvation shell to repel active water molecules f ...

Amer Chemical Soc2023

Materials engineering for improved stability of perovskite solar cells

Yeonju Kim

Halide perovskites have gained tremendous attention over the past decade, but the poor stability of perovskite solar cells (PSCs) under operating conditions hampers their practical application. This thesis investigates materials that can be used to enhance ...

EPFL2023

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Andras Kis, Andreas Schueler, Anna Krammer, Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani, Philip Johannes Walter Moll, Guilherme Migliato Marega

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Engineering of PEM-PEC photocathodes for solar-driven hydrogen production

Marina Caroline Michèle Caretti

Earth has always been in perpetual evolution, but today we must face its rapid change due to human activity. The intensification of industrial activities and transportation to support our modern lifestyles are the main causes of climate change and the adve ...

EPFL2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Single molecule fluorescence and phosphorescence studies using a scanning tunneling microscope

Abhishek Grewal

This thesis investigates novel single-molecule luminescence phenomena at their inherent, sub-molecular length scale. The microscopic understanding of luminescence processes will be crucial for the continued improvement of organic optoelectronic and semicon ...

EPFL2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Akshay Balgarkashi, Didem Dede, Elif Nur Dayi, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Tailoring electric dipole of hole-transporting material p-dopants for perovskite solar cells

Keith Gregory Brooks, Mohammad Khaja Nazeeruddin, Yi Zhang, Nadja Isabelle Desiree Klipfel, Jianxing Xia, Min Chen, Yu Shi

Li-TFSI/t-BP are the most widely employed p-dopants for hole-transporting materials (HTMs) within the state-of-the-art perovskite solar cells (PSCs). The hygroscopicity and migration of these dopants, however, lead to devices with limited stability. To sol ...

CELL PRESS2022

Robust Interfacial Modifier for Efficient Perovskite Solar Cells: Reconstruction of Energy Alignment at Buried Interface by Self-Diffusion of Dopants

Mohammad Khaja Nazeeruddin, Jianxing Xia

The under-coordinated defects within perovskite and its relevant interfaces always attract and trap the free carriers via the electrostatic force, significantly limiting the charge extraction efficiency and the intrinsic stability of perovskite solar cells ...

WILEY-V C H VERLAG GMBH2022

Optoelectronics based on the spin-valley physics of 2D materials

Juan Francisco Gonzalez Marin

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

EPFL2022