Publication

Iron Resonant Photoemission Spectroscopy on Anodized Hematite Points to Electron Hole Doping during Anodization

Related publications (32)

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Interfacial engineering for competitive Dye-Sensitized Solar Cells production

Natalie Flores Diaz

Renewable energy deployment and implementation of a circular economy will play a crucial role in decreasing CO2 emissions to meet the target from the Paris agreement. Dye-sensitized solar cells (DSSCs) can be designed in various colors and transparency for ...

EPFL2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Novel Interfacial Characterization and Surface Engineering in Semiconductor Electrodes for Optimized Solar Fuel Production

Yongpeng Liu

Harvesting sunlight, the ultimate renewable power source, in a cost-effective way has been long recognized as a necessary route to meet the global energy challenges. Solar energy can be transformed into electricity by means of photovoltaic devices to suppl ...

EPFL2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Luca Nela

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Mahan excitons in room-temperature methylammonium lead bromide perovskites

László Forró, Majed Chergui, Ana Akrap, Endre Horvath, Tania Palmieri, Edoardo Baldini, Márton Kollár

In a seminal paper, Mahan predicted that excitonic bound states can still exist in a semiconductor at electron-hole densities above the insulator-to-metal Mott transition. However, no clear evidence for this exotic quasiparticle, dubbed Mahan exciton, exis ...

Nature Publishing Group2020

Rational Design of Hole Transport Materials: Tools and Structure-Packing-Property Relationships

Kun-Han Lin

The growing demand for low-cost, large-scale and flexible electronics has led to a boost in research on organic semiconductors (OSC). Understanding structure-packing-property relationships (SPPR) and the role of molecular building blocks in charge transpor ...

EPFL2020

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Feliciano Giustino, Samuel Poncé

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Monica Morales Masis, Angela Nicole Fioretti

Transparent conductive materials (TCMs) with high p-type conductivity and broadband transparency have remained elusive for years. Despite decades of research, no p-type material has yet been found to match the performance of n-type TCMs. If developed, the ...

2020

Elucidating the Doping Mechanism in Fluorene-Dithiophene-Based Hole Selective Layer Employing Ultrahydrophobic Ionic Liquid Dopant

Mohammad Khaja Nazeeruddin, Tom Theodorus Antonius Lummen, Sanghyun Paek, Laura Calio

Perovskite solar cells have set a new milestone in terms of efficiencies in the thin film photovoltaics category. Long-term stability of perovskite solar cells is of paramount importance but remains a challenging task. The lack of perovskite solar cells st ...

2020

Structural, electronic, elastic, power, and transport properties of beta-Ga2O3 from first principles

Feliciano Giustino, Samuel Poncé

We investigate the structural, electronic, vibrational, power, and transport properties of the beta allotrope of Ga2O3 from first principles. We find phonon frequencies and elastic constants that reproduce the correct band ordering, in agreement with exper ...

2020