Publication

Surface potential compact model for embedded flash devices oriented to IC memory design

Yusuf Leblebici, Alexandre Schmid
2012
Conference Papers

Abstract

A surface potential-based model for embedded flash memory cells has been developed with the purpose of providing a comprehensive physical understanding of the device operation suitable for performance optimization in memory circuit design. The device equations account for charge balance effects on the isolated floating gate node and parasitic couplings between the terminals of the memory cell. The compact model supports DC, AC and transient analyses, including program/erase bias scalability, drain disturb and memory endurance degradation due to oxide aging. After validation, the model has been applied to parametric analysis and used to evaluate critical trade-offs in memory design. (C) 2013 Elsevier Ltd. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/e1c5a6ca-de05-4fed-9787-a50f5a56e502

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Yusuf Leblebici, Alexandre Schmid
2012
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/e1c5a6ca-de05-4fed-9787-a50f5a56e502

About this result

Related concepts (32)

Flash memory

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

Semiconductor memory

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell.

Random-access memory

Random-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.

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Surface potential compact model for embedded flash devices oriented to IC memory design

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