Central processing unitA central processing unit (CPU)—also called a central processor or main processor—is the most important processor in a given computer. Its electronic circuitry executes instructions of a computer program, such as arithmetic, logic, controlling, and input/output (I/O) operations. This role contrasts with that of external components, such as main memory and I/O circuitry, and specialized coprocessors such as graphics processing units (GPUs). The form, design, and implementation of CPUs have changed over time, but their fundamental operation remains almost unchanged.
X86-64x86-64 (also known as x64, x86_64, AMD64, and Intel 64) is a 64-bit version of the x86 instruction set, first released in 1999. It introduced two new modes of operation, 64-bit mode and compatibility mode, along with a new 4-level paging mode. With 64-bit mode and the new paging mode, it supports vastly larger amounts of virtual memory and physical memory than was possible on its 32-bit predecessors, allowing programs to store larger amounts of data in memory.
Control gridThe control grid is an electrode used in amplifying thermionic valves (vacuum tubes) such as the triode, tetrode and pentode, used to control the flow of electrons from the cathode to the anode (plate) electrode. The control grid usually consists of a cylindrical screen or helix of fine wire surrounding the cathode, and is surrounded in turn by the anode. The control grid was invented by Lee De Forest, who in 1906 added a grid to the Fleming valve (thermionic diode) to create the first amplifying vacuum tube, the Audion (triode).
Current sourceA current source is an electronic circuit that delivers or absorbs an electric current which is independent of the voltage across it. A current source is the dual of a voltage source. The term current sink is sometimes used for sources fed from a negative voltage supply. Figure 1 shows the schematic symbol for an ideal current source driving a resistive load. There are two types. An independent current source (or sink) delivers a constant current. A dependent current source delivers a current which is proportional to some other voltage or current in the circuit.
NAND gateIn digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's laws, a two-input NAND gate's logic may be expressed as =+, making a NAND gate equivalent to inverters followed by an OR gate.
Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Bipolar junction transistorA bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.
Transistor countThe transistor count is the number of transistors in an electronic device (typically on a single substrate or "chip"). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in the cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observed that the transistor count doubles approximately every two years.
TetrodeA tetrode is a vacuum tube (called valve in British English) having four active electrodes. The four electrodes in order from the centre are: a thermionic cathode, first and second grids, and a plate (called anode in British English). There are several varieties of tetrodes, the most common being the screen-grid tube and the beam tetrode. In screen-grid tubes and beam tetrodes, the first grid is the control grid and the second grid is the screen grid. In other tetrodes one of the grids is a control grid, while the other may have a variety of functions.
NanocompositeNanocomposite is a multiphase solid material where one of the phases has one, two or three dimensions of less than 100 nanometers (nm) or structures having nano-scale repeat distances between the different phases that make up the material. The idea behind Nanocomposites is to use building blocks with dimensions in nanometre range to design and create new materials with unprecedented flexibility and improvement in their physical properties.
NOR gateThe NOR gate is a digital logic gate that implements logical NOR - it behaves according to the truth table to the right. A HIGH output (1) results if both the inputs to the gate are LOW (0); if one or both input is HIGH (1), a LOW output (0) results. NOR is the result of the negation of the OR operator. It can also in some senses be seen as the inverse of an AND gate. NOR is a functionally complete operation—NOR gates can be combined to generate any other logical function. It shares this property with the NAND gate.
Chemical vapor depositionChemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
