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We demonstrate Si3N4 photonic integrated circuits featuring ultra-low propagation loss and tight optical confinement, fabricated with a subtractive process. We report an increase in propagation loss in Si3N4 waveguides after exposure to ultraviolet (UV) irradiation, and loss recovery following a rapid thermal anneal (RTA). We show an intrinsic quality factor as high as 20×106 at 1.55 µm across a 100 mm wafer.
Camille Sophie Brès, Boris Zabelich, Christian André Clément Lafforgue
Tobias Kippenberg, Johann Emmeram Riemensberger, Jianqi Hu, Mikhail Churaev, Terence Albert Emile Blésin, Nikolai Kuznetsov, Chengli Wang, Zihan Li, Junyin Zhang, Wil Kao
Camille Sophie Brès, Marco Clementi, Ji Zhou