Publication

Unexpected electronic properties of strained La1.85Sr0.15CuO4 epitaxial films

Giorgio Margaritondo, Davor Pavuna, Daniel Ariosa Dupont, Mike Abrecht, Dominique Cloëtta
2003
Journal Articles

Abstract

Surprising results on electronic properties of strained thin La1.85Sr0.15CuO4 epitaxial films are reported. We report on the very first angle resolved photoemission (ARPES) measurements of the dispersion on in-situ grown, in-plane compressed T-phase LSCO films (showing T-C enhancement). The data show clear band crossing, implying that in-plane compressive strain at constant doping results in the suppression of the saddle point, changing the topology of the Fermi surface from hole-like to electron-like.

Official source

https://infoscience.epfl.ch/entities/publication/db3cd3f6-4ae4-492e-94ca-23509d67dc6b

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Giorgio Margaritondo, Davor Pavuna, Daniel Ariosa Dupont, Mike Abrecht, Dominique Cloëtta
2003
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/db3cd3f6-4ae4-492e-94ca-23509d67dc6b

About this result

Related concepts (17)

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Compressive strength

In mechanics, compressive strength (or compression strength) is the capacity of a material or structure to withstand loads tending to reduce size (as opposed to tensile strength which withstands loads tending to elongate). In other words, compressive strength resists compression (being pushed together), whereas tensile strength resists tension (being pulled apart). In the study of strength of materials, tensile strength, compressive strength, and shear strength can be analyzed independently.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Related publications (2)

Unexpected electronic properties of strained La1.85Sr0.15CuO4 epitaxial films

Chat with Graph Search

Single‐Crystalline Lateral p ‐SnS/ n ‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

Photoelectric devices