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Evaluating and Repairing Write Performance on Flash Devices

Related publications (30)

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Anastasia Ailamaki, Danica Porobic, Utku Sirin

Micro-architectural behavior of traditional disk-based online transaction processing (OLTP) systems has been investigated extensively over the past couple of decades. Results show that traditional OLTP systems mostly under-utilize the available micro-archi ...

2021

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

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Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Miss-Optimized Memory Systems: Turning Thousands of Outstanding Misses into Reuse Opportunities

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Even if Dennard scaling came to an end fifteen years ago, Moore' s law kept fueling an exponential growth in compute performance through increased parallelization. However, the performance of memory and, in particular, Dynamic Random Access Memory (DRAM), ...

EPFL2021

NVCache: A Plug-and-Play NVMM-based I/O Booster for Legacy Systems

Pascal Felber, Rafael Pereira Pires

This paper introduces NVCache, an approach that uses a non-volatile main memory (NVMM) as a write cache to improve the write performance of legacy applications. We compare NVCache against file systems tailored for NVMM (Ext4-DAX and NOVA) and with I/O-heav ...

IEEE2021

Leaking Secrets Through Compressed Caches

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We offer the first security analysis of cache compression, a promising architectural technique that is likely to appear in future mainstream processors. We find that cache compression has novel security implications because the compressibility of a cache l ...

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Perovskite Flash Memory with a Single-Layer Nanofloating Gate

Mohammad Khaja Nazeeruddin, Peng Gao, Tom Theodorus Antonius Lummen, Hobeom Kim

Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...

2020

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, Shikhar Tuli

The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a prom ...

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Distributed Computing with Modern Shared Memory

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In this thesis, we revisit classic problems in shared-memory distributed computing through the lenses of (1) emerging hardware technologies and (2) changing requirements. Our contributions consist, on the one hand, in providing a better understanding of th ...

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Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Andrea Bonetti, Adam Shmuel Teman, Robert Giterman

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Replica Bit-Line Technique for Internal Refresh in Logic-Compatible Gain-Cell Embedded DRAM

Robert Giterman, Odem Harel

Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...

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