Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy

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In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

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In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

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Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy

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