SupercapacitorA supercapacitor (SC), also called an ultracapacitor, is a high-capacity capacitor, with a capacitance value much higher than other capacitors but with lower voltage limits. It bridges the gap between electrolytic capacitors and rechargeable batteries. It typically stores 10 to 100 times more energy per unit volume or mass than electrolytic capacitors, can accept and deliver charge much faster than batteries, and tolerates many more charge and discharge cycles than rechargeable batteries.
AdaBoostAdaBoost, short for Adaptive Boosting, is a statistical classification meta-algorithm formulated by Yoav Freund and Robert Schapire in 1995, who won the 2003 Gödel Prize for their work. It can be used in conjunction with many other types of learning algorithms to improve performance. The output of the other learning algorithms ('weak learners') is combined into a weighted sum that represents the final output of the boosted classifier. Usually, AdaBoost is presented for binary classification, although it can be generalized to multiple classes or bounded intervals on the real line.
Thin filmA thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering.
Dielectric strengthIn physics, the term dielectric strength has the following meanings: for a pure electrically insulating material, the maximum electric field that the material can withstand under ideal conditions without undergoing electrical breakdown and becoming electrically conductive (i.e. without failure of its insulating properties). For a specific piece of dielectric material and location of electrodes, the minimum applied electric field (i.e. the applied voltage divided by electrode separation distance) that results in breakdown.
Siemens (unit)The siemens (symbol: S) is the unit of electric conductance, electric susceptance, and electric admittance in the International System of Units (SI). Conductance, susceptance, and admittance are the reciprocals of resistance, reactance, and impedance respectively; hence one siemens is redundantly equal to the reciprocal of one ohm (Ω^−1) and is also referred to as the mho. The siemens was adopted by the IEC in 1935, and the 14th General Conference on Weights and Measures approved the addition of the siemens as a derived unit in 1971.
Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
Dennard scalingIn semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length. The law, originally formulated for MOSFETs, is based on a 1974 paper co-authored by Robert H. Dennard, after whom it is named. Dennard's model of MOSFET scaling implies that, with every technology generation: Transistor dimensions could be scaled by −30% (0.
SiliceneSilicene is a two-dimensional allotrope of silicon, with a hexagonal honeycomb structure similar to that of graphene. Contrary to graphene, silicene is not flat, but has a periodically buckled topology; the coupling between layers in silicene is much stronger than in multilayered graphene; and the oxidized form of silicene, 2D silica, has a very different chemical structure from graphene oxide. Although theorists had speculated about the existence and possible properties of free-standing silicene, researchers first observed silicon structures that were suggestive of silicene in 2010.
