Admittance Matrix of a Trapezoidal Piezoelectric Heterogeneous Bimorph

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Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...

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Admittance Matrix of a Trapezoidal Piezoelectric Heterogeneous Bimorph

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Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

Towards biomimetic behavior of an active deployable tensegrity structure

Piezoelectric enhancement under negative pressure

Characterization and Fatigue of the Converse Piezoelectric Effect in PZT Films for MEMS Applications

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

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Advanced sol-gel processing of PZT thin films for piezoelectric MEMS structures

Piezoresponse force microscopy on doubly clamped KNbO3 nanowires