Publication

Coverage Dependent Surface Photovoltage Induced by Synchrotron Radiation at Metal/GaAs Interfaces

Giorgio Margaritondo
1991
Journal Articles

Abstract

Contact potential difference measurements of synchrotron radiation-induced surface photovoltage (SPV) are performed on GaAs(110) as a function of metal coverage and temperature. On low doped n-samples, the low temperature SPV (0.55 eV) is almost equal to the total band bending at submonolayer coverage and discharges with a time constant of hours. Above a monolayer, the rate of discharging increases dramatically, emphasizing the role of charge leakage through the overlayer. The room temperature SPV is considerably smaller (0.2 eV) and its coverage dependence does not correlate with that of band bending. A metal-dependent enhancement of SPV is found. No significant SPV is detected on highly doped p-GaAs.

Official source

https://infoscience.epfl.ch/entities/publication/cfb5966e-477c-4ffa-8da2-08b87927af86

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Giorgio Margaritondo
1991
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/cfb5966e-477c-4ffa-8da2-08b87927af86

About this result

Related concepts (32)

Band diagram

In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. These diagrams help to explain the operation of many kinds of semiconductor devices and to visualize how bands change with position (band bending). The bands may be coloured to distinguish level filling. A band diagram should not be confused with a band structure plot.

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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.

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