Publication

Optical study on ultrathin InAs/InP single quantum wells

Jean-François Carlin, Alok Rudra, Jean-Louis Staehli
1995
Journal Articles

Abstract

Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.

Official source

https://infoscience.epfl.ch/entities/publication/cf2e3c2e-3af8-44ce-9bf0-f1163760a163

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Jean-François Carlin, Alok Rudra, Jean-Louis Staehli
1995
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/cf2e3c2e-3af8-44ce-9bf0-f1163760a163

About this result

Related concepts (31)

Anderson's rule

Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). It is also referred to as the electron affinity rule, and is closely related to the Schottky–Mott rule for metal–semiconductor junctions. Anderson's rule was first described by R. L. Anderson in 1960.

Photoluminescence

Photoluminescence (abbreviated as PL) is light emission from any form of matter after the absorption of photons (electromagnetic radiation). It is one of many forms of luminescence (light emission) and is initiated by photoexcitation (i.e. photons that excite electrons to a higher energy level in an atom), hence the prefix photo-. Following excitation, various relaxation processes typically occur in which other photons are re-radiated.

Indium arsenide

Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 μm. The detectors are usually photovoltaic photodiodes.

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Optical study on ultrathin InAs/InP single quantum wells

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