Fabrication and characterization of wafer-level deep TSV arrays

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In order to develop sustainable and more powerful information technology (IT) infrastructures, the challenges posed by the "memory wall" are critical for the design of high-performance and high-efficiency many-core computing systems. In this context, recen ...

The integration of passivating contacts based on a highly doped polycrystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) layer has been identified as the next step to further increase the conversion efficiency of current mainstream cry ...

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

The objective of this PhD thesis is the development of a microfluidic platform for the real-time measurements of the mechanical properties of biological analytes at the single entity level. The systems developed for these purposes consist of piezoelectrica ...

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturin ...

Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instan ...

This contribution focuses on the fabrication and characterization of microchannel plates made of hydrogenated amorphous silicon (AMCPs). Flexible fabrication processes and the semi-conducting nature of amorphous silicon could give these detectors the advan ...

Fabrication and characterization of wafer-level deep TSV arrays

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Fabrication and Characterization of High Aspect Ratio Amorphous Silicon Based Microchannel Plates