Publication

X-ray photoemission and photoreflectance study of Au ultrathin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfaces

Giorgio Margaritondo
1999
Journal Articles

Abstract

The paper presents room temperature photoreflectance measurements carried out on the Au/ultrathin Si/n-crystalline GaAs structure with the silicon interlayer thickness gradually changing from about 4-27 Angstrom prepared in situ under ultra-high-vacuum conditions. A continuous change of the phase shift of the corresponding photoreflectance signal of more than 180 degrees has been observed in the Eg-critical-point oscillation of GaAs depending on the Si interlayer thickness. The explanation of the effect is based on the composition changes of the Au/Si interface monitored by X-ray photoelectron spectroscopy. The photoreflectance results are compared to the photoreflectance signal phase changes observed on the semi-insulating GaAs surfaces exposed to the low-temperature hydrogen plasma. (C) 1999 Elsevier Science S.A. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/c9083a5f-b7b4-4df1-89d2-41c4491ed6fb

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Giorgio Margaritondo
1999
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/c9083a5f-b7b4-4df1-89d2-41c4491ed6fb

About this result

Related concepts (22)

X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique based on the photoelectric effect that can identify the elements that exist within a material (elemental composition) or are covering its surface, as well as their chemical state, and the overall electronic structure and density of the electronic states in the material. XPS is a powerful measurement technique because it not only shows what elements are present, but also what other elements they are bonded to.

Photoemission spectroscopy

Photoemission spectroscopy (PES), also known as photoelectron spectroscopy, refers to energy measurement of electrons emitted from solids, gases or liquids by the photoelectric effect, in order to determine the binding energies of electrons in the substance. The term refers to various techniques, depending on whether the ionization energy is provided by X-ray, XUV or UV photons. Regardless of the incident photon beam, however, all photoelectron spectroscopy revolves around the general theme of surface analysis by measuring the ejected electrons.

Auger electron spectroscopy

Auger electron spectroscopy (AES; pronounced oʒe in French) is a common analytical technique used specifically in the study of surfaces and, more generally, in the area of materials science. It is a form of electron spectroscopy that relies on the Auger effect, based on the analysis of energetic electrons emitted from an excited atom after a series of internal relaxation events. The Auger effect was discovered independently by both Lise Meitner and Pierre Auger in the 1920s.

Related publications (1)

X-ray photoemission and photoreflectance study of Au ultrathin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfaces

Chat with Graph Search

Spectromicroscopy beamline at ELETTRA: Performances achieved at the end of commissioning