Publication

Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions

Jean-Daniel Ganière
1997
Journal Articles

Abstract

We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecular beam epitaxy, the II/VI flux ratio employed during the early stages of II-VI growth can be used to control the local interface composition and the band alignment. Here we demonstrate that the local interface composition in pseudomorphic, strained ZnSe/GaAs(001) heterostructures as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures also have a dramatic effect on the nucleation of native stacking fault defects. Such extended defects have been associated with the early degradation of blue-green lasers. We found, in particular, that Se-rich interfaces consistently exhibited a density of Shockley stacking fault pairs below our detection limit and three to four orders of magnitude lower than those encountered at interfaces fabricated in Zn-rich conditions. (C) 1997 American Vacuum Society. [S0734-211X(97)09104-X].

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https://infoscience.epfl.ch/entities/publication/c5783d19-63bb-4f2c-8a5f-477bae86c950

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Jean-Daniel Ganière
1997
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/c5783d19-63bb-4f2c-8a5f-477bae86c950

About this result

Related concepts (32)

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Crystallographic defect

A crystallographic defect is an interruption of the regular patterns of arrangement of atoms or molecules in crystalline solids. The positions and orientations of particles, which are repeating at fixed distances determined by the unit cell parameters in crystals, exhibit a periodic crystal structure, but this is usually imperfect. Several types of defects are often characterized: point defects, line defects, planar defects, bulk defects. Topological homotopy establishes a mathematical method of characterization.

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

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Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions

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