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Wireless neuromodulation with porous silicon

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Silica aerogel as rear reflector in silicon heterojunction solar cells for improved infrared response

Deniz Türkay

Silicon (Si), with its indirect bandgap, is a non-ideal absorber. Thus, various strategies to boost silicon solar cells' efficiency, including advanced texturing, multilayer anti-reflecting coating, and rear reflectors are utilized. Dielectrics, deposited ...

ELSEVIER2023

Contact Design for Silicon Heterojunction Solar Cells

Luca Massimiliano Antognini

Today more than ever the world needs clean energy sources and thus a fast deployment and scaling up of the photovoltaic industry. In this context improving solar cell efficiency plays a major role. In order to achieve the maximum single junction efficiency ...

EPFL2022

Characterization and Development of Fired Passivating Contacts for Silicon Solar Cells

Mario Joe Lehmann

One of the key elements to improve mainstream crystalline silicon (c-Si) solar cell performance is surface passivation, which is at the center of the ongoing transition from cells with direct silicon-metal contacts to full area passivating contacts. In the ...

EPFL2022

Liquid metal infiltration of silicon based alloys into porous carbonaceous materials. Part II: Experimental verification of modelling approaches by infiltration of Si-Zr alloy into idealized microchannels

Ludger Weber, Caroline Hain, Manoj Kondibhau Naikade

In this work, the mechanisms leading to the pore closure in reactive melt infiltration (RMI) of carbon by pure silicon and a near eutectic Si-8 at-pct Zr alloy at 1500 and 1700 degrees C under vacuum were studied. Various geometrical configurations of micr ...

ELSEVIER SCI LTD2022

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Mario Joe Lehmann, Philippe Wyss, Audrey Marie Isabelle Morisset

In this article, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found t ...

2022

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

Nicolas Würsch, Sylvain Dunand

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devic ...

MDPI2022

Three-dimensional in situ imaging of single-grain growth in polycrystalline In2O3:Zr films

Quentin Thomas Jeangros, Monica Morales Masis, Michael Elias Stückelberger

Understanding grain morphology and kinetics of solid-phase crystallization is important for controlling the functional properties of polycrystalline materials. Here, in situ coherent X-ray diffraction imaging and transmission electron microscopy elucidate ...

SPRINGERNATURE2022

Matrix product states with backflow correlations

Giuseppe Carleo

By taking inspiration from the backflow transformation for correlated systems, we introduce a tensor network Ansatz which extends the well-established matrix product state representation of a quantum many-body wave function. This structure provides enough ...

AMER PHYSICAL SOC2022

Status and perspectives of crystalline silicon photovoltaics in research and industry

Christophe Ballif, Franz-Josef Haug, Mathieu Gérard Boccard

Crystalline silicon (c-Si) photovoltaics has long been considered energy intensive and costly. Over the past decades, spectacular improvements along the manufacturing chain have made c-Si a low-cost source of electricity that can no longer be ignored. Over ...

2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Audrey Marie Isabelle Morisset

The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficiency ho ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Localisation of front side passivating contacts for direct metallisation of high-efficiency c-Si solar cells

Christophe Ballif, Franz-Josef Haug, Sylvain Nicolay, Xavier Niquille, Andrea Ingenito, Frank Meyer

In this work, we present the development of passivating contacts based on thin interfacial oxide/doped polysilicon for two side contacted c-Si solar cells. In the first part, we discuss our layer optimization towards direct metallisation, using firing thro ...

ELSEVIER2022

In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset

The integration of passivating contacts based on a highly doped polycrystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) layer has been identified as the next step to further increase the conversion efficiency of current mainstream cry ...

AMER CHEMICAL SOC2022

Strained crystalline nanomechanical resonators with quality factors above 10 billion

Tobias Kippenberg, Nils Johan Engelsen, Sergey Fedorov, Alberto Beccari

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...

NATURE PORTFOLIO2022

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Yusuf Leblebici, Zuhal Tasdemir

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

AMER CHEMICAL SOC2022

Carrier-selective contacts using metal compounds for crystalline silicon solar cells

Mathieu Gérard Boccard, Julie Amandine Dreon

Solar cells rely on the efficient generation of electrons and holes and the subsequent collection of these photoexcited charge carriers at spatially separated electrodes. High wafer quality is now commonplace for crystalline silicon (c-Si) based solar cell ...

WILEY2023

Material Development for Perovskite/Silicon Tandem Photovoltaics

Peter Joseph Fiala

The developed world is built on the fact that energy is readily available and functionally infinite. The electricity from the wall, the gas at the station, and the heat in our homes are reliable and low-cost. But this comfort is so far only possible throug ...

EPFL2022

The role of Encapsulants in the long-term performance of advanced Crystalline Silicon Glass-Glass PV modules

Luca Gnocchi

The adoption of crystalline silicon (c-Si) PV modules based on glass-glass (G-G) structures is gaining momentum because of the possibility to manufacture bifacial panels, collecting light from the rear side. Despite not being an optimal material, Ethylene ...

EPFL2022

A new versatile hybrid MEMS technology for high sensitivity, fluid proof sensing applications

Matthias Neuenschwander

The field of micro electromechanical systems (MEMS) evolved from the microelectronic industry and the technologies developed to fabricate integrated circuits. As a result, MEMS are commonly fabricated on silicon wafers. The development of MEMS has been dri ...

EPFL2022

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Mario Joe Lehmann, Philippe Wyss, Audrey Marie Isabelle Morisset

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021