Publication

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Related publications (29)

Scalable fabrication of functional nanostructures on stretchable substrates by capillary-assisted particle assembly and adhesion lithography

The fabrication of metallic nanostructures on stretchable substrates enables specific applications that exploit the combination of the nano-scale phenomena and the mechanical tunability of the physical dimensions of the nanostructures. Due to the large dif ...

EPFL2022

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

High-Temperature HEMT Mode

Farzan Jazaeri, Nika Sahebghalam

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Semiconducting two dimensional transition metal dichalcogenides via solution-processable routes

Rebekah Anne Wells

Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess remarkable optoelectronic properties which are unique and tunable based on composition and thickness. These materials are posed to revolutionize ultrathin devices across many fields inclu ...

EPFL2022

Comparison of electrical and optical transduction modes of DNA-wrapped SWCNT nanosensors for the reversible detection of neurotransmitters

Giovanni Boero, Jürgen Brugger, Nergiz Sahin Solmaz

In this study, we compare the electrical and optical signal transduction of nanoscale biosensors based on single -walled carbon nanotubes (SWCNTs). Solution processable single-stranded (ss) DNA-wrapped SWCNTs were used for the fabrication of the distinct s ...

2022

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Luca Selmi, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021