AND gateThe AND gate is a basic digital logic gate that implements logical conjunction (∧) from mathematical logic - AND gate behaves according to the truth table. A HIGH output (1) results only if all the inputs to the AND gate are HIGH (1). If not all inputs to the AND gate are HIGH, LOW output results. The function can be extended to any number of inputs. There are three symbols for AND gates: the American (ANSI or 'military') symbol and the IEC ('European' or 'rectangular') symbol, as well as the deprecated DIN symbol.
Silicon–germaniumSiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.
Dynamic voltage scalingIn computer architecture, dynamic voltage scaling is a power management technique in which the voltage used in a component is increased or decreased, depending upon circumstances. Dynamic voltage scaling to increase voltage is known as overvolting; dynamic voltage scaling to decrease voltage is known as undervolting. Undervolting is done in order to conserve power, particularly in laptops and other mobile devices, where energy comes from a battery and thus is limited, or in rare cases, to increase reliability.
NAND gateIn digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's laws, a two-input NAND gate's logic may be expressed as =+, making a NAND gate equivalent to inverters followed by an OR gate.
Silicon photonicsSilicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI).
Silicon on sapphireSilicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.
Dynamic frequency scalingDynamic frequency scaling (also known as CPU throttling) is a power management technique in computer architecture whereby the frequency of a microprocessor can be automatically adjusted "on the fly" depending on the actual needs, to conserve power and reduce the amount of heat generated by the chip. Dynamic frequency scaling helps preserve battery on mobile devices and decrease cooling cost and noise on quiet computing settings, or can be useful as a security measure for overheated systems (e.g.
Silicon nanowireSilicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium ion batteries, thermoelectrics and sensors. Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology. SiNWs have unique properties that are not seen in bulk (three-dimensional) silicon materials.
XOR gateXOR gate (sometimes EOR, or EXOR and pronounced as Exclusive OR) is a digital logic gate that gives a true (1 or HIGH) output when the number of true inputs is odd. An XOR gate implements an exclusive or () from mathematical logic; that is, a true output results if one, and only one, of the inputs to the gate is true. If both inputs are false (0/LOW) or both are true, a false output results. XOR represents the inequality function, i.e., the output is true if the inputs are not alike otherwise the output is false.
Failure of electronic componentsElectronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates.
Solid-state electronicsSolid-state electronics are semiconductor electronics; electronic equipment that use semiconductor devices such as transistors, diodes and integrated circuits (ICs). The term is also used as an adjective for devices in which semiconductor electronics that have no moving parts replace devices with moving parts, such as the solid-state relay in which transistor switches are used in place of a moving-arm electromechanical relay, or the solid-state drive (SSD) a type of semiconductor memory used in computers to replace hard disk drives, which store data on a rotating disk.
