Modeling of Cd Uptake and Efflux Kinetics in Metal-Resistant Bacterium Cupriavidus metallidurans

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

Vibration monitoring plays a key role in numerous applications, including machinerypredictive maintenance, shock detection, space applications, packaging-integrity monitoring andmining. Here, we investigate mechanical nonlinearities inherently present in s ...

Additive manufacturing (AM) is a group of processing technologies which has the potential to revolutionize manufacturing by allowing easy manufacturing of complex shapes and small series. One AM-method which is of high interest for processing of metals is ...

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

Modeling of Cd Uptake and Efflux Kinetics in Metal-Resistant Bacterium Cupriavidus metallidurans

Chat with Graph Search

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Vibration monitoring based on optical sensing of mechanical nonlinearities in glass suspended waveguides

Defect formation and mitigation during laser powder bed fusion of copper

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Multi-channel nanowire devices for efficient power conversion

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs