Large-Stroke Dielectric Elastomer Actuators With Ion- Implanted Electrodes

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

Dielectric Elastomer Actuators (DEAs) enable the realization of energy-efficient and compact actuator systems. DEAs operate at the kilovolt range with typically microampere-level currents and hence minimize thermal losses in comparison to low voltage/high ...

The ability to control high-voltage actuator arrays relies, to date, on expensive microelectronic processes or on individual wiring of each actuator to a single off-chip high-voltage switch. Here we present an alternative approach that uses on-chip photoco ...

In this study, experiments were performed to measure the inception and breakdown voltages of SF6/CO2 mixed gases with varying mixing ratios at two different pressures (1 and 2 bar). Using the preliminary data obtained from the experiments, a 3D particle mo ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

Humidity, temperature and membrane prestretch influence the dielectric breakdown strength of elastomer membranes. These three factors thus also influence the maximum force and strain that dielectric elastomer actuators (DEAs) can generate, as the Maxwell p ...

In this article, a setup including a passive gas breakdown mitigation technique for satellite slip ring assemblies (SRAs) is introduced and tested. The setup features a central conducting ring, separated from two external conducting limiting discs (LDs) by ...

Performance of dielectric elastomer actuators is closely related to its breakdown field. On the other hand, to enhance the available energy, multilayer configuration is needed to increase the amount of active material. However, multilayer configuration suf ...

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

This thesis reports the use of metal-coated three-dimensional SU-8 electrodes for dielectrophoretic bio sensing and particle manipulation applications. Placing free standing three-dimensional electrodes in microfluidic channels, electric fields can be appl ...

In this work, we present a new device concept for compact high-voltage sensing with high-impedance input port, consisting of an AlGaN/GaN high-electron-mobility channel controlled by trapped carriers generated by a metallic electrode. The high-voltage appl ...

Direct current (DC) gas breakdown is experimentally investigated for high-voltage circular conductors and insulators that reproduce the main features of a satellite slip ring. Breakdown voltages are measured in the pressure range 10 ...

The electrical properties such as the electrical breakdown and the permittivity but also the softness of the elastomer are key factors for the performance of DEA. In order to have the best use of elastomer films, single-layer actuators have been deeply stu ...

Large-Stroke Dielectric Elastomer Actuators With Ion- Implanted Electrodes

Chat with Graph Search

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Electrode Impact on the Electrical Breakdown of Dielectric Elastomer Thin Films

Dynamic control of high-voltage actuator arrays by light-pattern projection on photoconductive switches

Positive Streamer Initiation in SF6/CO2 Based on Zener's Field Ionization

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Multi-channel nanowire devices for efficient power conversion

Influence of humidity, temperature and prestretch on the dielectric breakdown strength of silicone elastomer membranes for DEAs

Slip Ring Test Assembly With Increased Breakdown Voltage Limit for High-Voltage Bus Satellites

Towards the material limit and field concentration smoothing in multilayer dielectric elastomer actuators

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Three-dimensional electrodes for dielectrophoretic applications

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

Gas breakdown mitigation in satellite slip rings

Drastic breakdown field reduction in multilayer DEA