Publication

Frequency-Effects in Silane Plasmas for Plasma Enhanced Chemical Vapor-Deposition

Christoph Hollenstein, Alan Howling, Jean-Luc Dorier
1992
Journal Articles

Abstract

It is now generally recognized that the excitation frequency is an important parameter in radio-frequency (rf) plasma-assisted deposition. Very-high-frequency (VHF) silane plasmas (50-100 MHz) have been shown to produce high quality amorphous silicon films up to 20 angstrom/s [H. Curtins, N. Wyrsch, M. Favre, and A. V. Shah, Plasma Chem. Plasma Processing 7, 267 (1987)], and therefore the aim of this work is to compare the VHF range with the 13.56 MHz industrial frequency in the same reactor. The principal diagnostics used are electrical measurements and a charge coupled device camera for spatially resolved plasma-induced emission with Abel inversion of the plasma image. We present a comparative study of key discharge parameters such as deposition rates, plasma uniformity, ion impact energy, power transfer efficiency, and powder formation for the rf range 13-70 MHz.

Official source

https://infoscience.epfl.ch/entities/publication/b9823a89-db78-488d-82eb-5684066a864c

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Christoph Hollenstein, Alan Howling, Jean-Luc Dorier
1992
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/b9823a89-db78-488d-82eb-5684066a864c

About this result

Related concepts (32)

Plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.

Chemical vapor deposition

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.

Physical vapor deposition

Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation.

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Frequency-Effects in Silane Plasmas for Plasma Enhanced Chemical Vapor-Deposition

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