Publication

Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy

Related publications (32)

Effect of cooling conditions on microstructures and mechanical behaviors of reheated low-carbon weld metals

Cyril Cayron, Roland Logé, Rui Cao, Gaojun Mao

An investigation was conducted to systematically explore the relationships among microstructure evolution, continuous cooling transformation kinetics, and mechanical properties development in a low-carbon reheated weld metal (0.052C-1.5Mn-0.3Si-0.7Cr-0.8Mo ...

ELSEVIER SCIENCE SA2019

Tribological response of multilayered gold nickel coating deposited on fine turned surfaces

Stefano Mischler, Valentine Agnès Madeleine Magnin

Gold coating are widely used in industry due to their corrosion resistance, electrical conductivity and low contact resistance. However, friction and wear can limit their functionality and lifetime. This study addresses the degradation of a commercial fine ...

ELSEVIER SCIENCE SA2019

Corrosion behaviour of Ti6A14V ELI nanotubes for biomedical applications

Anna Neus Igual Muñoz

Surfaces engineering on titanium biomedical alloys aiming for improving bone regeneration, healing periods and increasing lifetime needs fora fundamental understanding of the electrochemical reactions occurring at the interface biomaterial/human fluid. The ...

2019

Novel daylighting system based on advanced embedded optical microstructures for various facade orientation and climates

Jing Gong

The design of highly glazed building has become a worldwide trend in modern architecture. However, glazing may induce large thermal loss in winter while increase cooling load in summer, and it may also cause glare. In order to solve the problems, a novel m ...

EPFL2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

Emanuele Andrea Casu

In the past half-century, the semiconductor industry has relied on the scaling of complementary metal-oxide-semiconductor (CMOS) transistor dimensions and on material and geometrical innovations to increase the computational density. Approaching the end of ...

EPFL2018

Corrosion mechanisms and durability models for historical tinplate food cans

Fabio Cova Caiazzo

Since the early of the 19th century, canning is one the most efficient ways to preserve foods. Tinplated steel has been used since the beginning for this purpose and it is still one of the most used materials for cans production because it combines the goo ...

EPFL2018

Nanocrystalline Boron-Doped Diamond as a Corrosion-Resistant Anode for Water Oxidation via Si Photoelectrodes

Ladislav Kavan, Jun Ho Yum, Kevin Sivula, Florian Le Formal, Petr Ashcheulov

Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corro ...

AMER CHEMICAL SOC2018

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Gizem Nogay

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

Gold-free Growth of InAs Nanowires : Growth, Structural & Electrical Properties

Heidi Andrea Potts

Semiconductor nanowires are interesting building blocks for a variety of electronic and optoelectronic applications, and they provide an excellent platformto probe fundamental physical effects. For the realization of nanowire based devices, a deep understa ...

EPFL2017

Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Sandip De

In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, seconda ...

A V S Amer Inst Physics2017

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Oscar Esteban Rucavado Leandro

We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...

Elsevier Science Bv2017