Publication

Synchrotron-Radiation-Stimulated Tungsten Deposition on Silicon from W(CO)6

Giorgio Margaritondo
1991
Journal Articles

Abstract

We report a synchrotron-radiation-excited photoemission study of the adsorption of W(CO)6 on Si(111)2 x 1. W(CO)6 is shown to adsorb molecularly on Si at 100 K, and to undergo dissociation at room temperature (RT). Exposure of a reacted surface at 100 K to unmonochromatized synchrotron light results in the formation of a metal layer on Si. Such a metal layer is stable during RT annealing.

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Giorgio Margaritondo
1991
Journal Articles

Abstract

Official source

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Synchrotron-Radiation-Stimulated Tungsten Deposition on Silicon from W(CO)6

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