Metal gateA metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. They used silicon as channel material and a non-self-aligned aluminum gate.
Grain boundaryIn materials science, a grain boundary is the interface between two grains, or crystallites, in a polycrystalline material. Grain boundaries are two-dimensional defects in the crystal structure, and tend to decrease the electrical and thermal conductivity of the material. Most grain boundaries are preferred sites for the onset of corrosion and for the precipitation of new phases from the solid. They are also important to many of the mechanisms of creep.
Bit slicingBit slicing is a technique for constructing a processor from modules of processors of smaller bit width, for the purpose of increasing the word length; in theory to make an arbitrary n-bit central processing unit (CPU). Each of these component modules processes one bit field or "slice" of an operand. The grouped processing components would then have the capability to process the chosen full word-length of a given software design. Bit slicing more or less died out due to the advent of the microprocessor.
Boron nitrideBoron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic (zincblende aka sphalerite structure) variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior.
High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
FerroelectricityFerroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field. All ferroelectrics are also piezoelectric and pyroelectric, with the additional property that their natural electrical polarization is reversible. The term is used in analogy to ferromagnetism, in which a material exhibits a permanent magnetic moment. Ferromagnetism was already known when ferroelectricity was discovered in 1920 in Rochelle salt by Joseph Valasek.
Grain growthIn materials science, grain growth is the increase in size of grains (crystallites) in a material at high temperature. This occurs when recovery and recrystallisation are complete and further reduction in the internal energy can only be achieved by reducing the total area of grain boundary. The term is commonly used in metallurgy but is also used in reference to ceramics and minerals. The behaviors of grain growth is analogous to the coarsening behaviors of grains, which implied that both of grain growth and coarsening may be dominated by the same physical mechanism.
64-bit computingIn computer architecture, 64-bit integers, memory addresses, or other data units are those that are 64 bits wide. Also, 64-bit CPUs and ALUs are those that are based on processor registers, address buses, or data buses of that size. A computer that uses such a processor is a 64-bit computer. From the software perspective, 64-bit computing means the use of machine code with 64-bit virtual memory addresses.
16-bit computing16-bit microcomputers are microcomputers that use 16-bit microprocessors. A 16-bit register can store 216 different values. The range of integer values that can be stored in 16 bits depends on the integer representation used. With the two most common representations, the range is 0 through 65,535 (216 − 1) for representation as an (unsigned) binary number, and −32,768 (−1 × 215) through 32,767 (215 − 1) for representation as two's complement. Since 216 is 65,536, a processor with 16-bit memory addresses can directly access 64 KB (65,536 bytes) of byte-addressable memory.
8-bit computingIn computer architecture, 8-bit integers or other data units are those that are 8 bits wide (1 octet). Also, 8-bit central processing unit (CPU) and arithmetic logic unit (ALU) architectures are those that are based on registers or data buses of that size. Memory addresses (and thus address buses) for 8-bit CPUs are generally larger than 8-bit, usually 16-bit. 8-bit microcomputers are microcomputers that use 8-bit microprocessors.
Bit numberingIn computing, bit numbering is the convention used to identify the bit positions in a binary number. In computing, the least significant bit (LSb) is the bit position in a binary integer representing the binary 1s place of the integer. Similarly, the most significant bit (MSb) represents the highest-order place of the binary integer. The LSb is sometimes referred to as the low-order bit or right-most bit, due to the convention in positional notation of writing less significant digits further to the right.
Temperature coefficientA temperature coefficient describes the relative change of a physical property that is associated with a given change in temperature. For a property R that changes when the temperature changes by dT, the temperature coefficient α is defined by the following equation: Here α has the dimension of an inverse temperature and can be expressed e.g. in 1/K or K−1. If the temperature coefficient itself does not vary too much with temperature and , a linear approximation will be useful in estimating the value R of a property at a temperature T, given its value R0 at a reference temperature T0: where ΔT is the difference between T and T0.
