Publications related to Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Related publications (32)

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Sylvain Dunand, Luca Massimiliano Antognini, Jonathan Emanuel Thomet

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

Opportunities and challenges in design and optimization of protein function

Bruno Emanuel Ferreira De Sousa Correia, Casper Alexander Goverde

The field of protein design has made remarkable progress over the past decade. Historically, the low reliability of purely structure-based design methods limited their application, but recent strategies that combine structure-based and sequence-based calcu ...

Nature Portfolio2024

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Luca Massimiliano Antognini, Sofia Libraro, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Elsevier2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Camilla Arietta Vael-Garn

Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

EPFL2023

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Amirmohammad Miran Zadeh, Elison de Nazareth Matioli, Luca Nela, Catherine Erine

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

SPIE-INT SOC OPTICAL ENGINEERING2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Optoelectronics based on the spin-valley physics of 2D materials

Juan Francisco Gonzalez Marin

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Kirsten Emilie Moselund

Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-In ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED

Andras Kis, Dmitrii Unuchek, Fedele Tagarelli, Zhe Sun, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon

Devices based on two-dimensional (2D) semiconductors hold promise for the realization of compact and versatile on-chip interconnects between electrical and optical signals. Although light emitting diodes (LEDs) are fundamental building blocks for integrate ...

Nature Research2022

Versatile Electroluminescence Color-Tuning Strategy of an Efficient Light-Emitting Electrochemical Cell (LEC) by an Ionic Additive

Mohammad Khaja Nazeeruddin

The color-tuning strategies of solid-state light-emitting devices (ss-LEDs) are mainly focused on engineering molecular structures. In this paper, for the first time, we developed a facile strategy for tuning the electroluminescence (EL) color from orange ...

AMER CHEMICAL SOC2022

Single molecule fluorescence and phosphorescence studies using a scanning tunneling microscope

Abhishek Grewal

This thesis investigates novel single-molecule luminescence phenomena at their inherent, sub-molecular length scale. The microscopic understanding of luminescence processes will be crucial for the continued improvement of organic optoelectronic and semicon ...

EPFL2022

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal phase transition in Vanadium dioxide

Fatemeh Qaderi Rahaqi

Millimeter-wave (mm-wave) and terahertz (THz) detection has opened a significant research direction in imaging, sensing, spectroscopy, and ultrafast wireless communication. The sensitivity of the phase transition to electromagnetic waves in Vanadium dioxid ...

EPFL2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021