Composite materialA composite material (also called a composition material or shortened to composite, which is the common name) is a material which is produced from two or more constituent materials. These constituent materials have notably dissimilar chemical or physical properties and are merged to create a material with properties unlike the individual elements. Within the finished structure, the individual elements remain separate and distinct, distinguishing composites from mixtures and solid solutions.
Electrical resistance and conductanceThe electrical resistance of an object is a measure of its opposition to the flow of electric current. Its reciprocal quantity is , measuring the ease with which an electric current passes. Electrical resistance shares some conceptual parallels with mechanical friction. The SI unit of electrical resistance is the ohm (Ω), while electrical conductance is measured in siemens (S) (formerly called the 'mho' and then represented by ℧). The resistance of an object depends in large part on the material it is made of.
Precipitated silicaPrecipitated silica is an amorphous form of silica (silicon dioxide, SiO2); it is a white, powdery material. Precipitated silica is produced by precipitation from a solution containing silicate salts. The three main classes of amorphous silica are pyrogenic silica, precipitated silica and silica gel. Among them, precipitated silica has the greatest commercial significance. In 1999, more than one million tons were produced, half of it is used in tires and shoe soles.
Thin-film solar cellThin-film solar cells are made by depositing one or more thin layers (thin films or TFs) of photovoltaic material onto a substrate, such as glass, plastic or metal. Thin-film solar cells are typically a few nanometers (nm) to a few microns (μm) thick–much thinner than the wafers used in conventional crystalline silicon (c-Si) based solar cells, which can be up to 200 μm thick. Thin-film solar cells are commercially used in several technologies, including cadmium telluride (CdTe), copper indium gallium diselenide (CIGS), and amorphous thin-film silicon (a-Si, TF-Si).
X-ray spectroscopyX-ray spectroscopy is a general term for several spectroscopic techniques for characterization of materials by using x-ray radiation. When an electron from the inner shell of an atom is excited by the energy of a photon, it moves to a higher energy level. When it returns to the low energy level, the energy which it previously gained by the excitation is emitted as a photon which has a wavelength that is characteristic for the element (there could be several characteristic wavelengths per element).
X-ray fluorescenceX-ray fluorescence (XRF) is the emission of characteristic "secondary" (or fluorescent) X-rays from a material that has been excited by being bombarded with high-energy X-rays or gamma rays. The phenomenon is widely used for elemental analysis and chemical analysis, particularly in the investigation of metals, glass, ceramics and building materials, and for research in geochemistry, forensic science, archaeology and art objects such as paintings.
Silicon dioxideSilicon dioxide, also known as silica, is an oxide of silicon with the chemical formula , most commonly found in nature as quartz. In many parts of the world, silica is the major constituent of sand. Silica is one of the most complex and most abundant families of materials, existing as a compound of several minerals and as a synthetic product. Notable examples include fused quartz, fumed silica, silica gel, opal and aerogels. It is used in structural materials, microelectronics (as an electrical insulator), and as components in the food and pharmaceutical industries.
Physical vapor depositionPhysical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation.
E series of preferred numbersThe E series is a system of preferred numbers (also called preferred values) derived for use in electronic components. It consists of the E3, E6, E12, E24, E48, E96 and E192 series, where the number after the 'E' designates the quantity of logarithmic value "steps" per decade. Although it is theoretically possible to produce components of any value, in practice the need for inventory simplification has led the industry to settle on the E series for resistors, capacitors, inductors, and zener diodes.
VaristorA varistor (a.k.a. voltage-dependent resistor (VDR)) is a surge protecting electronic component with an electrical resistance that varies with the applied voltage. It has a nonlinear, non-ohmic current–voltage characteristic that is similar to that of a diode. Unlike a diode however, it has the same characteristic for both directions of traversing current. Traditionally, varistors were indeed constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in antiparallel configuration.
Electrical ballastAn electrical ballast is a device placed in series with a load to limit the amount of current in an electrical circuit. A familiar and widely used example is the inductive ballast used in fluorescent lamps to limit the current through the tube, which would otherwise rise to a destructive level due to the negative differential resistance of the tube's voltage-current characteristic. Ballasts vary greatly in complexity.
High-κ dielectricIn the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
