Publication

Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces

Giorgio Margaritondo
1999
Journal Articles

Abstract

We report x-ray photoelectron spectroscopy experimental results on band offsets at Ge/Si(100)2 x 1 interfaces grown by hydrogen and Sb-surfactant mediated epitaxy. For Ge deposited at 400 degrees C in Si(100)2 x 1, the valence band discontinuity was of 0.72 +/- 0.07 eV. Using atomic hydrogen and a Sb-monolayer mediated growth, we obtained values of 0.75 +/- 0.07 and 0.69 +/- 0.07 eV. Our data show that the surfactant Ge layer strain induced effects on the modification of band offsets are surprisingly negligible.

Official source

https://infoscience.epfl.ch/entities/publication/b0aa7317-c6fb-49d2-b45b-d9880160f2bb

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Giorgio Margaritondo
1999
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/b0aa7317-c6fb-49d2-b45b-d9880160f2bb

About this result

Related concepts (31)

Band diagram

In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. These diagrams help to explain the operation of many kinds of semiconductor devices and to visualize how bands change with position (band bending). The bands may be coloured to distinguish level filling. A band diagram should not be confused with a band structure plot.

Anderson's rule

Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). It is also referred to as the electron affinity rule, and is closely related to the Schottky–Mott rule for metal–semiconductor junctions. Anderson's rule was first described by R. L. Anderson in 1960.

Heterojunction

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.

Related publications (32)

Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces

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