Publication

InGaAs/InGaAsP/InP Edge Emitting Laser Diodes on p-GaAs Substrates Obtained by Localised Wafer Fusion

Elyahou Kapon, Jean-François Carlin, Alok Rudra, Claude-Albert Berseth
1997
Journal Articles

Abstract

The authors present low voltage barrier p-InP/p-GaAs junctions obtained by localised fusion which facilitates a better evacuation of absorbed gases and native oxides from the fused interface. Using this approach InGaAs/lnGaAsP/InP edge emitting lasers fused to p-GaAs were realised for the first time, showing better parameters than as-grown diodes. The presented results prove that localised fusion is a suitable tool for achieving additional lateral current confinement, which may be important for a wide variety of other device applications.

Official source

https://infoscience.epfl.ch/entities/publication/b02a62b4-2190-484f-a578-f87bbcef65bf

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Elyahou Kapon, Jean-François Carlin, Alok Rudra, Claude-Albert Berseth
1997
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/b02a62b4-2190-484f-a578-f87bbcef65bf

About this result

Related concepts (20)

Laser diode

A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.

Quantum dot

Quantum dots (QDs) – also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band.

Quantum well

A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e.

Related publications (10)

InGaAs/InGaAsP/InP Edge Emitting Laser Diodes on p-GaAs Substrates Obtained by Localised Wafer Fusion

Chat with Graph Search

Modulating non-radiative recombination related to shallow traps in halide perovskites

Molecular Engineering of Iridium Blue Emitters Using Aryl N-Heterocyclic Carbene Ligands

High-speed Si resonant cavity enhanced photodetectors and arrays