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This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multiple PIN diode bars integrated on top of a SOI silicon waveguide and can be operated either at: (I) high-frequency (few MHz) based on the plasma dispersion effect and (II) low frequency (
Camille Sophie Brès, Edgars Nitiss, Boris Zabelich, Christian André Clément Lafforgue
Tobias Kippenberg, Johann Emmeram Riemensberger, Mikhail Churaev, Xinru Ji, Terence Albert Emile Blésin, Chengli Wang, Zihan Li, Junyin Zhang, Xi Wang, Chen Yang, Wil Kao