Publication

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Yusuf Leblebici, Alexandre Schmid, Davide Garetto
2012
Journal Articles

Abstract

Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-of- equilibrium quasi-Fermi levels in proximity of the Si/SiO2 inter- face has been studied in detail.

Official source

https://infoscience.epfl.ch/entities/publication/ac4bbb89-5adc-4b7a-82f9-2b6dcbe413b1

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Chat with Graph Search

Murunskite - a new class of functional material

From hidden order to antiferromagnetism: Electronic structure changes in Fe-doped URu2Si2

Extremely large magnetoresistance in the "ordinary" metal ReO3