Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications

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Integrated Short-Circuit Protection Design Based on Dual-Channel Gate Driver for Series Connected Medium-Voltage SiC MOSFETs

Drazen Dujic, Rui Wang

Series connection of Silicon carbide (SiC) MOSFETs is needed for increasing the blocking voltage of available power devices (limited to 3.3 kV in the market) and has been extensively studied, particularly in the context of voltagebalancing design during no ...

IEEE2025

Roadmap on atomic-scale semiconductor devices

Gabriel Aeppli

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in s ...

IOP Publishing Ltd2025

Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Gennaro Termo

We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (i ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Towards Oxide Electronics: a Roadmap

Ulf Anders Hagfeldt, Francisco Sanchez, Mauro Fanciulli

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of ...

2019