Publication

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

Nicolas Grandjean, Marco Malinverni
2015
Journal Articles

Abstract

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to similar to 10(20) cm(-3), thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g.,

Official source

https://infoscience.epfl.ch/entities/publication/a8c74969-5750-4038-88c4-d43a7b51cfa9

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InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

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