Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those pho ...

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

Photonics integrated circuits are a promising solution for the growing demands of data transmission and future system-on-chip technologies. Within this context, nonlinear optical interactions offer unique opportunities for all-optical processing, sampling, ...

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

Electronic devices play an irreplaceable role in our lives. With the tightening time to market, exploding demand for computing power, and continuous desire for smaller, faster, less energy-consuming, and lower-cost chips, computer-aided design for electron ...

Nonlinear epsilon-near-zero (ENZ) nanodevices featuring vanishing permittivity and CMOS-compatibility are attractive solutions for large-scale-integrated systems-on-chips. Such confined systems with unavoidable heat generation impose critical challenges fo ...

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such as int ...

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

A photonic assembly, a laser setup comprising said photonic assembly and a method for performing frequency-modulated continuous-wave light detection and ranging using said laser setup are disclosed. The photonic assembly (1) comprises an active photonic ch ...

Nontrivial spectral properties of non-Hermitian systems can lead to intriguing effects with no counterparts in Hermitian systems. For instance, in a two-mode photonic system, by dynamically winding around an exceptional point (EP) a controlled asymmetric-s ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

Early works(1) and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits(2,3), modulators with improved half-wave voltage(4,5), electro-optic frequency combs(6) and on-chip electro-optic devic ...

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Chat with Graph Search

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Parametric Wavelength Conversion in Waveguiding Structures: Efficiency, Bandwidth and Polarization

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Contemporary Logic Synthesis: with an Application to AQFP Circuit Optimization

Thermo-optic epsilon-near-zero effects

Silicon nitride electric-field poled microresonator modulator

Generation of entangled photon pairs from a silicon bichromatic photonic crystal cavity

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Photonic assembly tunable via the pockels effect and method for use in frequency-modulated lidar

Dynamically crossing diabolic points while encircling exceptional curves: A programmable symmetric-asymmetric multimode switch

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Ultrafast tunable lasers using lithium niobate integrated photonics

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation